Array substrate for in-plane switching mode liquid crystal display device and fabricating method thereof

ABSTRACT

An array for an in-plane switching (IPS) mode liquid crystal display device includes a gate line formed on a substrate to extend in a first direction, a common line formed on the substrate to extend in the first direction, a data line formed to extend in a second direction, a thin film transistor formed at an intersection between the gate line and the data line, wherein the thin film transistor includes a gate line, a gate insulating layer, an active layer, a source electrode, and a drain electrode, a passivation film formed on the substrate including the thin film transistor, a pixel electrode formed on the passivation film located on a pixel region defined by the gate line and the data line, the pixel electrode being electrically connected to the drain electrode, a common electrode formed on the passivation film, and a common electrode connection line connected to the common electrode and the common line, wherein the common electrode connection line overlaps with the common line and the drain electrode.

This application claims the benefit of the Korean Patent Application No.10-2010-0135829 filed on Dec. 27, 2010, which is hereby incorporated byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display (LCD) device,and more particularly to an array substrate for an in-plane switching(IPS) mode LCD device and a fabricating method thereof.

2. Discussion of the Related Art

In general, an LCD device is driven using optical anisotropy andpolarization of liquid crystal. The liquid crystal has a directivity inan arrangement of molecules due to its thin and long structure. Thedirectivity of the arrangement of the liquid crystal molecules iscontrollable by applying an electric field to the liquid crystal.

When the direction of the arrangement of the liquid crystal molecules isvoluntarily adjusted, the arrangement of the liquid crystal moleculeschanges, and light is refracted in the direction of the arrangement ofthe liquid crystal molecules by virtue of optical anisotropy of theliquid crystal, thereby displaying the image.

An Active Matrix (AM) LCD (AM-LCD, hereinafter, referred to as LCDdevice), in which thin film transistors (TFTs) and pixel electrodesconnected to the TFTs are arranged in a matrix form, is known for itshigh resolution and superior video implementation capability.

The LCD device includes a color filter substrate (i.e., upper substrate)having common electrodes, an array substrate (i.e., lower substrate)having pixel electrodes, and a liquid crystal layer interposed betweenthe upper and lower substrates. The LCD device having such structure isdriven by vertical electric field created between the common electrodesand the pixel electrode. Accordingly, such structures have excellentproperties such as transmittance, an aperture ratio, and the like.

However, such LCD devices have poor viewing angle properties. Thus, anewly introduced technique to overcome the drawback is a liquid crystaldriving method using horizontal electric fields for the in-planeswitching (IPS), which has improved viewing angle properties.

The IPS mode LCD device is configured to have the color filter substrateand the array substrate face each other, and have a liquid crystal layerinterposed between the color filter substrate and the array substrate.The array substrate includes a TFT, a common electrode, and a pixelelectrode located at each of a plurality of pixels defined on atransparent insulating substrate. The common electrode and the pixelelectrode are spaced apart from each other in parallel on the samesubstrate. The color filter substrate includes black matrixes located incorrespondence to positions of the gate line, the data line and the TFTall formed on the transparent insulating substrate, and a color filterlocated in accordance with a position of each pixel.

The liquid crystal layer is driven by horizontal fields between thecommon electrode and the pixel electrode. In the IPS mode LCD devicehaving the structure, the common electrode and the pixel electrode areformed to be transparent to ensure luminance. However, end portions ofthe common electrode and the pixel electrode block light, therebyreducing the aperture ratio.

Hereinafter, description will be given to the structure of the arraysubstrate for the related art IPS mode LCD device. FIG. 1 is a planeview of an array substrate for the related art IPS mode LCD device. FIG.2 is a sectional view taken along the line III-III of FIG. 1, i.e., asectional view of the array substrate for the IPS mode LCD device.

The array substrate for the related art IPS mode LCD device, as shown inFIGS. 1 and 2, includes a plurality of gate lines 13 and common lines 13b and 13 c extending in one direction on a substrate 1 and spaced fromeach other in parallel, a plurality of data lines 21 intersecting withthe gate lines 13 to define pixel regions at the intersectionstherebetween, a plurality of pixel electrodes 25 a formed at the pixelregions defined by the gate lines 13 and the data lines 21, thin filmtransistors (TFTs) T disposed at the intersections of the gate lines 13and the data lines 21. Each TFT T includes a gate electrode 13 a, anactive layer (not shown), a drain electrode 21 b and a source electrode21 a, and common electrodes 25 c disposed at the pixel regions definedby the gate lines 13 and the data lines 21, the common electrodes 25 cbeing spaced apart from the pixel electrodes 25 a.

The gate line 13 provides a scan signal from a gate driver (not shown).The data line 21 provides a video signal from a data driver (not shown).A gate insulating layer 15 is interposed between the gate line 13 andthe data line 21.

The common lines 13 b and 13 c are formed simultaneously when formingthe gate lines 13. The common line 13 b is arranged to be parallel tothe gate line 13, and the common line 13 c is arranged to beperpendicular to the gate line 13. The common lines 13 b and 13 c areconnected to each other. The common line 13 c overlaps with the dataline 21 having the gate insulating layer 15 interposed therebetween.

The TFT T allows the pixel electrode 25 a to be charged with a pixelsignal applied to the data line 21 by a scan signal applied to the gateline 13 and remain in the signal-charged state. The TFT T includes agate electrode 13 a connected to the gate line 13, a source electrode 21a connected to the data line 21, a drain electrode 21 b facing thesource electrode 21 a and connected to the pixel electrode 25 a, anactive layer 17 overlapping with the gate electrode 13 a having the gateinsulating layer 15 interposed therebetween to form a channel betweenthe source electrode 21 a and the drain electrode 21 b, and an ohmiccontact layer 19 formed on the active layer 17. The ohmic contact layer19 is formed on regions of the active layer 17 excluding the channelregion between the source and drain electrodes 21 a and 21 b.

A plurality of transparent pixel electrodes 25 a are disposed on theentire surface of the pixel region being spaced apart from the gate line13 and the data line 21. The plurality of pixel electrodes 25 a areelectrically connected to the drain electrode 21 b via a contact hole 23a formed through a lower passivation film 23. One end of the pluralityof pixel electrodes 25 a is connected together with a pixel electrodeconnection line 25 b, which overlaps with the common line 13 b.

As shown in FIG. 1, end portions of the plurality of common electrodes25 c spaced apart from the pixel electrodes 25 a are connected togetherwith a common electrode connection line 25 d. The common electrodeconnection line 25 d is electrically connected to the common line 13 cvia the common line contact hole 23 b.

As shown in FIG. 2, in the structure of the array substrate for therelated art LCD device, a first parasitic capacitor C1 is formed betweenthe pixel electrode connection line 25 b and the common line 13 b withthe gate insulating layer 15 and the passivation film 23 interposedtherebetween, and a second parasitic capacitor C2 is formed between thedrain electrode 21 b and the common line 13 b overlapping with the drainelectrode 2 lb with the gate insulating layer 15 interposedtherebetween.

The common electrodes 25 c apply a reference voltage, i.e., a commonvoltage to each pixel in order to drive the liquid crystal. The pixelelectrode 25 a and the neighboring common electrodes 25 c generate ahorizontal field therebetween. Accordingly, when a video signal isapplied to the pixel electrode 25 a via the TFT T, the voltagedifference between the pixel electrode 25 a and the common electrodes 25c, to which a common voltage is applied, generates horizontal fields torotate liquid crystal molecules arranged in a horizontal direction usingdielectric anisotropy. The transmittance of light in the pixel regionchanges according to the rotation level of the liquid crystal molecules.

However, according to the related art, as shown in part “A” of FIG. 2, afirst parasitic capacitor C1 is formed between the pixel electrodeconnection line 25 b and the common line 13 b, and a second parasiticcapacitor C2 is formed between the drain electrode 21 b and the commonline 13 b. The related art structure requires a space for forming suchparasitic capacitors, which may cause an aperture ratio to be loweredaccordingly. In particular, since the first and second parasiticcapacitors C1 and C2 are formed horizontal rather than perpendicular toeach other, they may occupy more area on the array substrate therebylowering the aperture ratio accordingly.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an array substrate foran in-plane switching mode liquid crystal display device and afabricating method thereof that substantially obviates one or moreproblems due to limitations and disadvantages of the related art.

An object of the present invention is to provide an array substrate foran in-plane switching (IPS) mode LCD device capable of increasing anaperture rate by reducing the area occupied by capacitors whilemaintaining the same sizes of the capacitors as those of the relatedart.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, the arraysubstrate for an in-plane switching mode liquid crystal display deviceand the fabricating method thereof includes a gate line formed on asubstrate to extend in a first direction, a common line formed on thesubstrate to extend in the first direction, a data line formed to extendin a second direction, a thin film transistor formed at an intersectionbetween the gate line and the data line, wherein the thin filmtransistor includes a gate line, a gate insulating layer, an activelayer, a source electrode, and a drain electrode, a passivation filmformed on the substrate including the thin film transistor, a pixelelectrode formed on the passivation film located on a pixel regiondefined by the gate line and the data line, the pixel electrode beingelectrically connected to the drain electrode, a common electrode formedon the passivation film, and a common electrode connection lineconnected to the common electrode and the common line, wherein thecommon electrode connection line overlaps with the common line and thedrain electrode.

In another aspect, the method for fabricating an array substrate for anin-plane switching (IPS) mode liquid crystal display device includesforming a gate line in a first direction, forming a common line in thefirst direction, forming a gate insulating layer on the gate line andthe common line, forming a data line on the gate insulating layer in asecond direction, forming a thin film transistor at an intersectionsbetween the gate line and the data line, wherein the thin filmtransistor includes a gate electrode, a gate insulating layer, an activelayer, a source electrode, and a drain electrode, forming a passivationfilm on the data line and the thin film transistor, forming a pixelelectrode on the passivation film located on a pixel region defined bythe gate line and the data line, the pixel electrode being electricallyconnected to the drain electrode, forming a common electrode on thepassivation film, and forming a common electrode connection lineconnected to the common electrode and the common line, wherein thecommon electrode connection line overlaps with the common line and thedrain electrode.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 is a plane view of an array substrate for an IPS mode LCD deviceaccording to the related art;

FIG. 2 is a sectional view taken along the line III-III of FIG. 1, whichis a sectional view of the array substrate for the IPS mode LCD device;

FIG. 3 is a plane view of an array substrate for an IPS mode LCD devicein accordance with an exemplary embodiment of the present invention;

FIG. 4 is a sectional view taken along the line IV-IV of FIG. 3, whichis a sectional view of the array substrate for the exemplary IPS modeLCD device;

FIGS. 5A to 5N are sectional views showing an exemplary process offabricating the array substrate for the exemplary IPS mode LCD device;and

FIGS. 6A to 6F are sectional views taken along the line VI-VI of FIG. 3,which are sectional views showing the exemplary process of fabricatingthe array substrate for the exemplary IPS mode LCD device. FIGS. 6A to6F show a process of fabricating a drain electrode contact hole and acommon line contact hole.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of thepresent invention, examples of which are illustrated in the accompanyingdrawings.

FIG. 3 is a plane view of an array substrate for an IPS mode LCD devicein accordance with an exemplary embodiment of the present invention.FIG. 4 is a sectional view taken along the line IV-IV of FIG. 3, whichis a sectional view of the array substrate for the exemplary IPS modeLCD device.

The array substrate for an IPS mode LCD device in accordance with thepresent invention may include a plurality of gate lines 103 c formed ona substrate 101 to extend in one direction and spaced from each other inparallel, common lines 103 b formed on the substrate 101 spaced apartfrom the gate line 103 c in parallel, a plurality of data lines 113 aintersecting with the gate lines 103 c to define pixel regions at theintersections therebetween, TFTs T each formed at the intersectionbetween the gate line 103 c and the data line 113 a and each having agate electrode 103 a, a gate insulating layer 107, an active layer 109a, a source electrode 113 b and a drain electrode 113 c, a passivationfilm 119 having a dual structure including a lower passivation film 119a and an upper passivation film 119 b formed on an entire substrateincluding the TFTs T, a plurality of pixel electrodes 123 a arranged onthe passivation film 119 located at each pixel region, defined byintersecting gate lines 103 c and data lines 113 a, and electricallyconnected to the drain electrode 113 c, a plurality of common electrodes123 c arranged on the passivation film 119 spaced apart from the pixelelectrodes 123 a, common electrode connection lines 123 d eachoverlapping with the common line 103 b and the drain electrode 113 c,and capacitors C1 and C2 formed between the common electrode connectionline 123 d and the drain electrode 113 c and between the drain electrode113 c and the common line 103 b, respectively. The capacitors C1 and C2are vertically formed by interposing the dual-layered passivation film119 and the gate insulating layer 107 therebetween, respectively. Thethickness of each layer of the passivation film 119 may be 3000 Å to5000 Å. One or more layers of the passivation film 119 may be formed ofsilicon nitride or silicon oxide.

The gate line 103 c may provide a scan signal from a gate driver (notshown) and the data line 113 a may provide a video signal from a datadriver (not shown). The gate lines 103 c and the data lines 113 a mayintersect with each other to define pixel regions at the intersectionstherebetween. The gate insulating layer 107 may be interposed betweenthe gate lines 103 c and the data lines 113 a.

The gate line 103 c may be formed in a multiple-layered structure havingmore than one or two layers, including a transparent conductive layer onthe substrate 101. The gate line 103 c may be formed in amultiple-layered structure by laminating a first conductive layer usinga transparent conductive layer and a second conductive layer using anon-transparent metal, or a single-layered structure using anon-transparent metal. The first conductive layer may be implemented byusing indium tin oxide (ITO), indium zinc oxide (IZO) or indium tin zincoxide (ITZO), and the second conductive layer may be formed using one ofcopper (Cu), molybdenum (Mo), aluminum (Al), Cu alloy, Mo alloy and Alalloy.

The TFT T allows the pixel electrode 123 a to be charged with and remainin the signal-charged state by pixel signal applied to the data line 113a and a scan signal applied to the gate line 103 c. Each TFT T mayinclude a gate electrode 103 a included in the gate line 103 c, a sourceelectrode 113 b connected to the data line 113 a, a drain electrode 113c facing the source electrode 113 c and connected to the pixel electrode123 a, an active layer 109 a overlapping with the gate electrode 103 awith the gate insulating layer 107 interposed therebetween and forming achannel between the source electrode 113 b and the drain electrode 113c, and an ohmic contact layer 111 a formed on the active layer 109 a.The ohmic contact layer 111 a may be formed on regions of the activelayer 109 a excluding the channel region between the source and drainelectrodes 113 b and 113 c.

The drain electrode 113 c may overlap with the lower common line 103 b.The active layer 109 a and the ohmic contact layer 111 a may overlapwith the data line 113 a. The data line 113 a may receive a pixel signalfrom the data driver (not shown) via a data pad (not shown). Theplurality of transparent pixel electrodes 123 a may be arranged to bespaced apart from each other on the entire pixel region, forming a gapfrom the gate line 103 a and the data line 113 a. The plurality of pixelelectrodes 123 a may be arranged to be parallel to the data line 113 a.First end portions of the plurality of pixel electrodes 123 a may beconnected together with the pixel electrode connection line 123 b, whichis disposed perpendicular to the data line 113 a. Second end portion ofone of the plurality of pixel electrodes 123 a adjacent to the data line113 a may be electrically connected to the drain electrode 113 c via adrain electrode contact hole 121 a formed at the dual-layeredpassivation film 119.

A plurality of common electrodes 123 c may be formed on the entire pixelregion in an alternating manner with the pixel electrodes 123 a. Theplurality of common electrodes 123 c may be arranged to be parallel tothe data line 113 a. First end portions of the plurality of commonelectrodes 123 c may be connected together via the common electrodeconnection line 123 d formed perpendicular to the data line 113 a. Thecommon electrode connection line 123 d may be electrically connected tothe common line 103 b via the common line contact hole 121 b formedthrough the dual-layered passivation film 119. The common electrodeconnection line 123 d may overlap with the drain electrode 113 c and thecommon line 103 b located at the lower side thereof.

As shown in part “B” of FIG. 4, the first and second capacitors C1 andC2 may be formed under the same area. In particular, the first capacitorC1 may be formed between the common electrode connection line 123 d andthe drain electrode 113 c with the dual-layered passivation film 119interposed therebetween, and the second capacitor C2 may be formedbetween the drain electrode 113 c and the common line 103 b with thegate insulating layer 107 interposed therebetween. In some cases, theactive layer 109 a may not be formed between the common line 103 b andthe drain electrode 113 c configuring the second capacitor C2.

The plurality of common electrodes 123 c may apply a reference voltage,i.e., a common voltage to each pixel in order to drive liquid crystal.The plurality of pixel electrodes 123 a and the plurality of commonelectrodes 123 c may generate horizontal fields on the passivation film119 located at each pixel region.

Accordingly, when a video signal is applied to the pixel electrode 123 avia the TFT T, the voltage difference between the pixel electrode 123 aand the common electrodes 123 c, to which the common voltage is applied,generates the horizontal fields such that the liquid crystal moleculesarranged in a horizontal direction between a TFT substrate and a colorfilter substrate (not shown) can be rotated by dielectric anisotropy.Transmittance of light in the pixel region changes according to therotation level of the liquid crystal molecules, thereby implementinggradation.

Hereinafter, description will be given of an exemplary method forfabricating the array substrate for the IPS mode LCD device inaccordance with the present invention as shown in FIGS. 5 and 6. FIGS.5A to 5N are sectional views showing an exemplary process of fabricatingthe array substrate for the exemplary IPS mode LCD device. FIGS. 6A to6F are sectional views taken along the line VI-VI of FIG. 3, which aresectional views showing the exemplary process of fabricating the arraysubstrate for the exemplary IPS mode LCD device. FIGS. 6A to 6F show aprocess of fabricating a drain electrode contact hole and a common linecontact hole.

As shown in FIG. 5A, non-pixel regions as well as a plurality of pixelregions having switching regions are defined on a transparent substrate101, on which a first conductive metal layer 103 is then deposited bysputtering. The first conductive metal layer 103 may be formed in asingle-layered structure using one or more of aluminum (Al), tungsten(W), copper (Cu), molybdenum (Mo), chrome (Cr), titanium (Ti), Mo alloy,Cu alloy, Al ally and the like, or in a structure of at least two layersdeposited, such as Al/Cr, Al/Mo, Al(Nd)/Al, Al(Nd)/Cr, Mo/Al(Nd)/Mo,Cu/Mo, Ti/Al(Nd)/Ti, Mo/Al, Mo alloy/Al alloy, Mo/Al alloy, Cu/Mo alloy,Cu/Mo(Ti) or the like. A photoresist having high transmittance isdeposited on the first conductive metal layer 103 to form a firstphotosensitive film 105.

As shown in FIG. 5B, the first photosensitive film 105 is exposed anddeveloped through a photolithography using masks (not shown), andselectively removed so as to form first photosensitive film patterns 105a. The first photosensitive film patterns 105 a remain merely on a gateline forming region and a common line forming region.

As shown in FIG. 5C, the first conductive metal layer 103 is selectivelypatterned using the first photosensitive film patterns 105 a asshielding films to form a gate line (not shown, see 103 c of FIG. 4), agate electrode 103 a extending from the gate line 103 c, and a commonline 103 b.

As shown in FIG. 5D, after removing the first photosensitive filmpatterns 105 a, a gate insulating layer 107 is deposited on the entiresubstrate. The gate insulating layer 107 may be made of silicon nitride(SiNx) or silicon oxide (SiO2).

As shown in FIG. 5E, an amorphous silicon layer (a-Si:H) 109, anamorphous silicon layer (n+ or p+) 111 containing impurities and asecond conductive metal layer 113 are sequentially deposited on theentire surface of the substrate 101, on which the gate insulating layer107 is formed. The amorphous silicon layer (a-Si:H) 109 and the impuritycontaining amorphous silicon layer (n+ or p+) 111 may be deposited by achemical vapor deposition (CVD) method. The second conductive metallayer 113 may be deposited by sputtering. The CVD method and thesputtering are merely exemplary deposition methods, and other depositionmethods may also be employed. The second conductive metal layer 113 maybe formed in a single-layered structure using one or more of aluminum(Al), tungsten (W), copper (Cu), molybdenum (Mo), chrome (Cr), titanium(Ti), Mo alloy, Cu alloy, Al ally and the like, or in a structure of atleast two layers deposited, such as Al/Cr, Al/Mo, Al(Nd)/Al, Al(Nd)/Cr,Mo/Al(Nd)/Mo, Cu/Mo, Ti/Al(Nd)/Ti, Mo/Al, Mo alloy/Al alloy, Mo/Alalloy, Cu/Mo alloy, Cu/Mo(Ti) or the like.

As shown in FIG. 5F, a second photosensitive film 115 having hightransmittance is deposited on the second conductive metal layer 113.Afterwards, an exposure process is executed for the secondphotosensitive film 115 using a diffraction mask 117 including lightblocking portions 117 a, a semi-transparent portion 117 b and atransparent portion 117 c. The light blocking portions 117 a of thediffraction mask 117 is located above the second photosensitive film 115corresponding to a data line forming region and source and drainelectrode forming regions. The semi-transparent portion 117 b of thediffraction mask 117 is located above the second photosensitive film 115corresponding to a channel region of the TFT T, i.e., the gate electrode103 a. Instead of the diffraction mask 117, a mask using lightdiffraction effects, a half-tone mask, or other masks may be used.

As shown in FIG. 5G, after performing a development process followingthe exposure process, the second photosensitive film 115 is selectivelypatterned to form first patterns 115 a on the data line forming regionand the source and drain electrode forming regions, and a second pattern115 b on the channel region of the TFT T. The first patterns 115 alocated on the data line forming region and the source and drainelectrode forming regions are not allowed to transmit lighttherethrough. Accordingly, they maintain the thickness of the secondphotosensitive film 115. However, the second pattern 115 b located onthe channel region of the TFT T is removed by a predetermined thicknessdue to light being partially transmitted into the second photosensitivefilm 115. In particular, the second pattern 115 b located on the channelregion of the TFT T is thinner than the first patterns 115 a located onthe data line forming region and the source and drain electrode formingregions.

As shown in FIG. 5H, the first patterns 115 a located on the data lineforming region and the source and drain electrode forming regions andthe second pattern 115 b located on the channel region of the TFT T areused as masks to selectively pattern the second conductive metal layer113, the impurity containing amorphous silicon layer 111, and theamorphous silicon layer 109, thereby forming a data line (not shown, see113 a of FIG. 3) and an active layer 109 a, and simultaneously definingthe source electrode forming region and the drain electrode formingregion. The impurity containing amorphous silicon layer 111 and theamorphous silicon layer 109, the second conductive metal layer 113 mayfirst be selectively etched through a wet etching, and then the impuritycontaining amorphous silicon layer 111 and the amorphous silicon layer109 may be etched through a dry etching.

As shown in FIG. 51, the second pattern 115 b located on the channelregion of the TFT T is completely removed through an ashing process,thereby exposing a portion of the second conductive metal layer 113beneath the second pattern 116 b located on the channel region of theTFT T. During the ashing process, the first patterns 115 a located onthe data line forming region and the source and drain electrode formingregions are also partially removed by a predetermined thickness. Inparticular, the first patterns 115 a formed on the data line formingregion and the source and drain electrode forming regions are partiallyetched during the ashing process.

As shown in FIG. 5J, the exposed second conductive metal layer 113 isetched through wet etching using the first patterns 115 a as a mask,thereby forming a source electrode 113 b and a drain electrode 113 cspaced apart from the source electrode 113 b.

Afterwards, although not shown, the impurity containing amorphoussilicon layer 111 located on the channel region is also removed throughthe dry etching to form an ohmic contact layer 111 a exposing thechannel region of the active layer 109 a, thereby forming a TFT Tincluding the gate electrode 103 a, the gate insulating layer 107, theactive layer 109 a, the ohmic contact layer 111 a, the source electrode113 b, and the drain electrode 113 c.

As shown in FIGS. 5K and 6A, a lower passivation film 119 a is depositedon the entire substrate having the TFT T, and an upper passivation film119 b is deposited on the lower passivation film 119 a. The lower andupper passivation films 119 a and 119 b may be made of an inorganicinsulating material. Further, the lower and upper passivation films 119a and 119 b may form a passivation film 119 having a dual-layeredstructure. Afterwards, a photoresist having high transmittance isdeposited on the dual-layered passivation film 119 to form a thirdphotosensitive film 120.

As shown in FIG. 6B, the photosensitive film 120 is exposed anddeveloped through a photolithography using masks (not shown) andselectively patterned to form third photosensitive film patterns 120 a.

As shown in FIG. 6C, the dual-layered upper and lower passivation films119 b and 119 a are selectively removed using the third photosensitivefilm pattern 120 a as a mask to form a drain electrode contact hole 121a for exposing the drain electrode 113 c. The dual-layered upper andlower passivation films 119 b and 119 a and the gate insulating layer107 located beneath the passivation film 119 are selectively removed toform a common line contact hole 121 b for exposing the common line 103b.

As shown in FIGS. 5L and 6D, after removing the third photosensitivefilm patterns 120 a, a transparent conductive material layer 123 isdeposited, through sputtering, on the passivation film 119 including thedrain electrode contact hole 121 a and the common line contact hole 121b. The transparent conductive material layer 123 may be made of indiumtin oxide (ITO), indium zinc oxide (IZO), or the like. A photoresisthaving high transmittance is then deposited on the transparentconductive material layer 123 to form a fourth photosensitive layer 125.

As shown in FIGS. 5M and 6E, the fourth photosensitive film 125 isexposed and developed through a photolithography using masks (notshown), and selectively patterned to form fourth photosensitive filmpatterns 125 a.

As shown in FIGS. 5N and 6F, the transparent conductive material layer123 is selectively patterned using the fourth photosensitive filmpatterns 125 a as masks, thereby simultaneously forming a plurality ofpixel electrodes 123 a, which are electrically connected to the drainelectrode 113 c via the drain electrode contact hole 121 a, and aplurality of common electrodes 123 c, which are electrically connectedto the common line 103 b via the common line contact hole 121 b. Theplurality of pixel electrodes 123 a may be disposed, being spaced apartfrom one another, on the pixel region defined by the gate lines 103 aand the data lines 113 a. The plurality of pixel electrodes 123 a may bedisposed to be parallel to the data lines 113 a. First end portions ofthe plurality of pixel electrodes 123 a may be connected together by apixel electrode connection line 123 b disposed perpendicular to the datalines 113 a. Second end portion of one of the plurality of pixelelectrodes 123 a adjacent to the data line 113 a, of the plurality ofpixel electrodes 123 a, is electrically connected to the drain electrode113 c via the drain electrode contact hole 121 a formed on thedual-layered passivation film 119.

The plurality of common electrodes 123 c may be formed by being spacedapart from the pixel electrodes 123 a in an alternating manner. Theplurality of common electrodes 123 c may be disposed to be parallel tothe data lines 113 a. First end portions of the plurality of commonelectrodes 123 c may be connected together by a common electrodeconnection line 123 d disposed perpendicular to the data lines 113 a.The common electrode connection line 123 d may be electrically connectedto the common line 103 b via the common line contact hole 121 b formedthrough the dual-layered passivation films 119 a and 119 b. The commonelectrode connection line 123 d may overlap with the drain electrode 113c and the common line 103 b located at the lower side thereof

Accordingly, as shown in FIGS. 5N and 6F, under the same area, first andsecond capacitors C1 and C2 are formed. In this exemplary embodiment,the first capacitor C1 is formed between the common electrode connectionline 123 d and the drain electrode 113 c, which are vertically disposedwith the dual-layered passivation film 119 interposed therebetween.Further, the second capacitor C2 is formed between the drain electrode113 c and the common line 103 b, which are vertically disposed with thegate insulating film 107 interposed therebetween. Although not shown,the remaining fourth photosensitive film pattern 125 a is removed,thereby completing the fabrication process of the array substrate forthe IPS mode LCD device. Afterwards, although not shown, a color filtersubstrate fabrication process and a process of filling a liquid crystallayer between the array substrate and the color filter substrate areperformed, thereby fabricating the IPS mode LCD device.

As described above, in accordance with an array substrate for an IPSmode LCD device and a fabricating method thereof in this specification,capacitors can simultaneously be formed between a common electrodeconnection line and a drain electrode and between the drain electrodeand a common line, wherein a dual-layered passivation film and a gateinsulating film are interposed between the capacitors, respectively.Therefore, the number of capacitors per area can be increased, resultingin an increase in the aperture rate.

In the array substrate for the IPS mode LCD device and the fabricatingmethod thereof, to overcome the drawback that short defect may easily becaused between a data line and a common electrode connection line due toforeign materials generated during processes when a single-layeredpassivation film is formed between the data line and the commonelectrode connection line, a dual-layered passivation film can be formedto minimize and/or prevent the short defect generated between the dataline and the common electrode connection line.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the array substrate for anin-plane switching mode liquid crystal display device and a fabricatingmethod thereof of the present invention without departing from thespirit or scope of the invention. Thus, it is intended that the presentinvention cover the modifications and variations of this inventionprovided they come within the scope of the appended claims and theirequivalents.

1-12. (canceled)
 13. A method for fabricating an array substrate for anin-plane switching (IPS) mode liquid crystal display device, comprising:forming a gate line in a first direction; forming a common line in thefirst direction; forming a gate insulating layer on the gate line andthe common line; forming a data line on the gate insulating layer in asecond direction; forming a thin film transistor at an intersectionsbetween the gate line and the data line, wherein the thin filmtransistor includes a gate electrode, a gate insulating layer, an activelayer, a source electrode, and a drain electrode; forming a passivationfilm on the data line and the thin film transistor; forming a pixelelectrode on the passivation film located on a pixel region defined bythe gate line and the data line, the pixel electrode being electricallyconnected to the drain electrode; forming a common electrode on thepassivation film; and forming a common electrode connection lineconnected to the common electrode and the common line, wherein thecommon electrode connection line overlaps with the common line and thedrain electrode.
 14. The method of claim 13, wherein the passivationfilm includes multiple passivation layers.
 15. The method of claim 13,wherein the passivation film is a dual-layered passivation filmincluding a lower passivation film and an upper passivation film. 16.The method of claim 13, wherein a first capacitor is formed between thecommon electrode connection line and the drain electrode with apassivation film interposed therebetween.
 17. The method of claim 16,wherein a second capacitor is formed between the drain electrode and thecommon line with the gate insulating film interposed therebetween. 18.The method of claim 17, wherein the first and second capacitors areformed in series.
 19. The method of claim 13, wherein the pixelelectrode is connected to a pixel electrode connection line.
 20. Themethod of claim 13, wherein the pixel electrode is connected to thedrain electrode via a drain electrode contact hole formed through thepassivation film, and the common electrode connection line is connectedto the common line via a common line contact hole formed through thepassivation film and the gate insulating film.
 21. The method of claim20, wherein the drain electrode contact hole and the common electrodecontact hole are simultaneously formed.
 22. The method of claim 13,wherein the first direction is perpendicular to the second direction.23. The method of claim 13, wherein the thickness of the passivationfilm is 3000 Å to 5000 Å.
 24. The method of claim 13, wherein thepassivation film is formed of silicon nitride or silicon oxide.
 25. Themethod of claim 13, wherein the pixel electrode and the common electrodeare simultaneously formed.